品牌:世微 | 型号:AP50N10 | 封装:TO252 |
批号:AP50N10 | 应用领域:汽车电子、 网络通信、 医疗电子、 测量仪器、 智能家居、 家用电器、 照明电子、 3C数码、 新能源 |
Super Low Gate Charge
Green Device Available
Excellent Cdv/dt effect decline
Advanced high cell density Trench
technology
Product Summary
BVDSS
RDSON
ID
100V
18 m惟
50A
Description
TO252 Pin Configuration
The AP50N10 is the highest performance trench N-
ch MOSFETs with extreme high cell density,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The AP50N10 meet the RoHS and Green Product
requirement, *** EAS guaranteed with full
function reliability approved.